KSC1008OTA
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | KSC1008 |
| Description | Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92-3 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tape & Box (TB)
- Part Status Obsolete
- Transistor Type NPN
- Current - Collector (Ic) (Max) 700mA
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 2V
- Power - Max 800mW
- Frequency - Transition 50MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number KSC1008
- detail Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92-3
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