KSE803S
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| Manufacturer | ON Semiconductor |
| Package | TO-225AA, TO-126-3 |
| Datasheet | KSE800-KSE803 |
| Description | Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Obsolete
- Transistor Type NPN - Darlington
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V
- Power - Max 40W
- Frequency - Transition -
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-126-3
- Base Part Number KSE80
- detail Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
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