KSH122ITU
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| Manufacturer | ON Semiconductor |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | KSH122ITU |
| Description | Bipolar (BJT) Transistor NPN - Darlington 100V 8A 1.75W Through Hole I-PAK |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Obsolete
- Transistor Type NPN - Darlington
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
- Current - Collector Cutoff (Max) 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
- Power - Max 1.75W
- Frequency - Transition -
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package I-PAK
- Base Part Number KSH12
- detail Bipolar (BJT) Transistor NPN - Darlington 100V 8A 1.75W Through Hole I-PAK
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