MJE180PWD
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| Manufacturer | ON Semiconductor |
| Package | TO-225AA, TO-126-3 |
| Datasheet | MJE180-MJE182 |
| Description | Bipolar (BJT) Transistor NPN 40V 3A 50MHz 1.5W Through Hole TO-126 |
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تغییرات قیمت
مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Obsolete
- Transistor Type NPN
- Current - Collector (Ic) (Max) 3A
- Voltage - Collector Emitter Breakdown (Max) 40V
- Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V
- Power - Max 1.5W
- Frequency - Transition 50MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-126
- Base Part Number MJE180
- detail Bipolar (BJT) Transistor NPN 40V 3A 50MHz 1.5W Through Hole TO-126
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