FQD10N20LTF
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| Manufacturer | ON Semiconductor |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FQD10N20L |
| Description | N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak) |
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مشخصات
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 51W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package TO-252, (D-Pak)
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FQD1
- detail N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak)
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