2N5550RLRPG
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | 2N5550, 5551 |
| Description | Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tape & Box (TB)
- Part Status Obsolete
- Transistor Type NPN
- Current - Collector (Ic) (Max) 600mA
- Voltage - Collector Emitter Breakdown (Max) 140V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
- Power - Max 625mW
- Frequency - Transition 300MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number 2N5550
- detail Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3
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