2N6427RLRAG
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | 2N6426, 2N6427 |
| Description | Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 625mW Through Hole TO-92-3 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Transistor Type NPN - Darlington
- Current - Collector (Ic) (Max) 500mA
- Voltage - Collector Emitter Breakdown (Max) 40V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max) 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V
- Power - Max 625mW
- Frequency - Transition -
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number 2N6427
- detail Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 625mW Through Hole TO-92-3
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