BS107ARL1
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | BS107, BS107A |
| Description | N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 6.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id 3V @ 1mA
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
- FET Feature -
- Power Dissipation (Max) 350mW (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-92-3
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number BS107
- detail N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3
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