MPSW63RLRA
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Datasheet | MPSW63, 64 |
| Description | Bipolar (BJT) Transistor PNP - Darlington 30V 500mA 125MHz 1W Through Hole TO-92 (TO-226) |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Transistor Type PNP - Darlington
- Current - Collector (Ic) (Max) 500mA
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
- Power - Max 1W
- Frequency - Transition 125MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package TO-92 (TO-226)
- Base Part Number MPSW63
- detail Bipolar (BJT) Transistor PNP - Darlington 30V 500mA 125MHz 1W Through Hole TO-92 (TO-226)
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