NJL4281DG
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| Manufacturer | ON Semiconductor |
| Package | TO-264-5 |
| Datasheet | NJL4281,4302D |
| Description | Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Obsolete
- Transistor Type NPN + Diode (Isolated)
- Current - Collector (Ic) (Max) 15A
- Voltage - Collector Emitter Breakdown (Max) 350V
- Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 8A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5A, 5V
- Power - Max 230W
- Frequency - Transition 35MHz
- Operating Temperature -65°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-264-5
- Supplier Device Package TO-264
- Base Part Number NJL4281
- detail Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264
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