NTD4860N-1G
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| Manufacturer | ON Semiconductor |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | NTD4860N |
| Description | N-Channel 25V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W (Tc) Through Hole I-PAK |
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مشخصات NTD4860N-1G
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 10.4A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 7.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1308pF @ 12V
- FET Feature -
- Power Dissipation (Max) 1.28W (Ta), 50W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number NTD48
- detail N-Channel 25V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W (Tc) Through Hole I-PAK
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