NDF06N62ZG
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 Full Pack |
| Datasheet | ND(F,P)06N62Z |
| Description | N-Channel 620V 6A (Tc) 31W (Tc) Through Hole TO-220FP |
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تغییرات قیمت
مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 620V
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 923pF @ 25V
- FET Feature -
- Power Dissipation (Max) 31W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP
- Package / Case TO-220-3 Full Pack
- Base Part Number NDF06
- detail N-Channel 620V 6A (Tc) 31W (Tc) Through Hole TO-220FP
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