2SC4134S-E
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| Manufacturer | ON Semiconductor |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | 2SC4134 |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW Through Hole TP |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Obsolete
- Transistor Type NPN
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V
- Power - Max 800mW
- Frequency - Transition 120MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package TP
- Base Part Number 2SC4134
- detail Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW Through Hole TP
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