FJN4301RTA
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | FJN4301 |
| Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3 |
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مشخصات
- Manufacturer ON Semiconductor
- Series -
- Packaging Cut Tape (CT)
- Part Status Obsolete
- Transistor Type PNP - Pre-Biased
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Resistor - Base (R1) 4.7 kOhms
- Resistor - Emitter Base (R2) 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- Frequency - Transition 200MHz
- Power - Max 300mW
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-92-3
- Base Part Number FJN430
- detail Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
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