NVD5867NLT4G-TB01
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| Manufacturer | ON Semiconductor |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | NVD5867NL |
| Description | N-Channel 60V 6A (Ta), 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3 |
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مشخصات NVD5867NLT4G-TB01
- Manufacturer ON Semiconductor
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 6A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 39mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.3W (Ta), 43W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package DPAK-3
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number NVD586
- detail N-Channel 60V 6A (Ta), 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3
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