فروشنده های IXFK55N50
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تغییرات قیمت
مشخصات IXFK55N50
- Manufacturer IXYS
- Series HiPerFET™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 90mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
- FET Feature -
- Power Dissipation (Max) 625W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-264AA (IXFK)
- Package / Case TO-264-3, TO-264AA
- detail N-Channel 500V 55A (Tc) 625W (Tc) Through Hole TO-264AA (IXFK)
فروشنده های IXFK55N50
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