IXTU01N80
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| Manufacturer | IXYS |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | IXT(U,Y)01N80 |
| Description | N-Channel 800V 100mA (Tc) 25W (Tc) Through Hole TO-251 |
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مشخصات
- Manufacturer IXYS
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 50Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
- FET Feature -
- Power Dissipation (Max) 25W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-251
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- detail N-Channel 800V 100mA (Tc) 25W (Tc) Through Hole TO-251
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