IXFH150N20T
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| Manufacturer | IXYS |
| Package | TO-247-3 |
| Datasheet | IXFx150N20T |
| Description | N-Channel 200V 150A (Tc) 890W (Tc) Through Hole TO-247AD (IXFH) |
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تغییرات قیمت
مشخصات
- Manufacturer IXYS
- Series HiPerFET™, TrenchT2™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 15mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 11700pF @ 25V
- FET Feature -
- Power Dissipation (Max) 890W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247AD (IXFH)
- Package / Case TO-247-3
- detail N-Channel 200V 150A (Tc) 890W (Tc) Through Hole TO-247AD (IXFH)
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