IXTH110N10L2
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| Manufacturer | IXYS |
| Package | TO-247-3 |
| Datasheet | IXT(H,T)110N10L2 |
| Description | N-Channel 100V 110A (Tc) 600W (Tc) Through Hole TO-247 (IXTH) |
sellers IXTH110N10L2
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تغییرات قیمت
مشخصات
- Manufacturer IXYS
- Series Linear L2™
- Packaging Bulk
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 18mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V
- FET Feature -
- Power Dissipation (Max) 600W (Tc)
- Operating Temperature -
- Mounting Type Through Hole
- Supplier Device Package TO-247 (IXTH)
- Package / Case TO-247-3
- detail N-Channel 100V 110A (Tc) 600W (Tc) Through Hole TO-247 (IXTH)
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