IXFP6N120P
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| Manufacturer | IXYS |
| Package | TO-220-3 |
| Datasheet | IXF(A,P,H)6N120P |
| Description | N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-220AB |
sellers IXFP6N120P
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تغییرات قیمت
مشخصات
- Manufacturer IXYS
- Series HiPerFET™, PolarP2™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1200V
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 25V
- FET Feature -
- Power Dissipation (Max) 250W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- detail N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-220AB
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