IXFH160N15T2
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| Manufacturer | IXYS |
| Package | TO-247-3 |
| Datasheet | IXFH160N15T |
| Description | N-Channel 150V 160A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH) |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 880W
- Total Gate Charge (Qg@Vgs) 253nC@10V
- Drain Source Voltage (Vdss) 150V
- Input Capacitance (Ciss@Vds) 15000pF@25V
- Continuous Drain Current (Id) 160A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 9mΩ@10V,80A
- Package TO-247-3
- Manufacturer IXYS
- Series TrenchHV™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 150V
- Current - Continuous Drain (Id) @ 25°C 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 9.6mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V
- FET Feature -
- Power Dissipation (Max) 830W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247AD (IXFH)
- Package / Case TO-247-3
- detail N-Channel 150V 160A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH)
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