IXTH200N075T
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| Manufacturer | IXYS |
| Package | TO-247-3 |
| Datasheet | IXT(H,Q)200N075T |
| Description | N-Channel 75V 200A (Tc) 430W (Tc) Through Hole TO-247 (IXTH) |
sellers IXTH200N075T
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تغییرات قیمت
مشخصات
- Manufacturer IXYS
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 75V
- Current - Continuous Drain (Id) @ 25°C 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
- FET Feature -
- Power Dissipation (Max) 430W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247 (IXTH)
- Package / Case TO-247-3
- detail N-Channel 75V 200A (Tc) 430W (Tc) Through Hole TO-247 (IXTH)
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