IXFV110N10P
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| Manufacturer | IXYS |
| Package | TO-220-3, Short Tab |
| Datasheet | IXF(H,V)110N10P(S) |
| Description | N-Channel 100V 110A (Tc) 480W (Tc) Through Hole PLUS220 |
sellers IXFV110N10P
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تغییرات قیمت
مشخصات
- Manufacturer IXYS
- Series PolarHT™ HiPerFET™
- Packaging Bulk
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 15mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 25V
- FET Feature -
- Power Dissipation (Max) 480W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package PLUS220
- Package / Case TO-220-3, Short Tab
- detail N-Channel 100V 110A (Tc) 480W (Tc) Through Hole PLUS220
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