IXFM67N10
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| Manufacturer | IXYS |
| Package | TO-204AE |
| Datasheet | IXF(H,M,)(67,75)N10 |
| Description | N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-204AE |
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مشخصات IXFM67N10
- Manufacturer IXYS
- Series HiPerFET™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 25mOhm @ 33.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
- FET Feature -
- Power Dissipation (Max) 300W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-204AE
- Package / Case TO-204AE
- detail N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-204AE
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