STN3P6F6
در 0 فروشگاه قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | STMicroelectronics |
| Package | TO-261-4, TO-261AA |
| Datasheet | STN3P6F6 |
| Description | P-Channel 60V 2.6W (Tc) Surface Mount SOT-223 |
فروشنده های STN3P6F6
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات STN3P6F6
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STN3P6F6
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 2.6W
- Total Gate Charge (Qg@Vgs) 6.4nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 340pF@48V
- Continuous Drain Current (Id) 3A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 160mΩ@10V,1.5A
- Package SOT-223
- Manufacturer STMicroelectronics
- Series DeepGATE™, STripFET™ VI
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C -
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 160mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V
- FET Feature -
- Power Dissipation (Max) 2.6W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Package / Case TO-261-4, TO-261AA
- Base Part Number STN3P
- detail P-Channel 60V 2.6W (Tc) Surface Mount SOT-223
فروشنده های STN3P6F6
فروشگاهی یافت نشد
