CSD86330Q3D
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| Manufacturer | Texas Instruments |
| Package | 8-PowerLDFN |
| Datasheet | CSD86330Q3D |
| Description | Mosfet Array 2 N-Channel (Half Bridge) 25V 20A 6W Surface Mount 8-LSON (3.3x3.3) |
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مشخصات CSD86330Q3D
- RoHS true
- Type 2 N-Channel(Half Bridge)
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD86330Q3D
- Power Dissipation (Pd) 6W
- Drain Source Voltage (Vdss) 25V
- Continuous Drain Current (Id) 20A
- Gate Threshold Voltage (Vgs(th)@Id) 2.1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 9.6mΩ@8V,14A
- Package LSON-8(3.3x3.3)
- Manufacturer Texas Instruments
- Vgs(th) (Max) @ Id 2.1V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 920pF @ 12.5V
- Package / Case 8-PowerLDFN
- Series NexFET™
- Drain to Source Voltage (Vdss) 25V
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C 20A
- Packaging Cut Tape (CT)
- Supplier Device Package 8-LSON (3.3x3.3)
- Part Status Active
- Base Part Number CSD86330
- FET Feature Logic Level Gate
- Mounting Type Surface Mount
- FET Type 2 N-Channel (Half Bridge)
- Power - Max 6W
- Rds On (Max) @ Id, Vgs 9.6mOhm @ 14A, 8V
- detail Mosfet Array 2 N-Channel (Half Bridge) 25V 20A 6W Surface Mount 8-LSON (3.3x3.3)
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