STY139N65M5
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | STY139N65M5 |
| Description | N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247™ |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STY139N65M5
- Operating Temperature +150°C@(Tj)
- Power Dissipation (Pd) 625W
- Total Gate Charge (Qg@Vgs) 363nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 15600pF@100V
- Continuous Drain Current (Id) 130A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 9pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 14mΩ@10V,65A
- Package -
- Manufacturer STMicroelectronics
- Series MDmesh™ V
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 17mOhm @ 65A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 363nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 100V
- FET Feature -
- Power Dissipation (Max) 625W (Tc)
- Mounting Type Through Hole
- Supplier Device Package MAX247™
- Package / Case TO-247-3
- Base Part Number STY139
- detail N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247™
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