STP11NM60ND

STP11NM60ND

STP11NM60ND

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مشخصات فنی:
Manufacturer STMicroelectronics
Package TO-220-3
Datasheet STx11NM60N
Description N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220AB

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet STMicroelectronics STP11NM60ND
  • Operating Temperature +150°C@(Tj)
  • Power Dissipation (Pd) 90W
  • Total Gate Charge (Qg@Vgs) 30nC@10V
  • Drain Source Voltage (Vdss) 600V
  • Input Capacitance (Ciss@Vds) 850pF@50V
  • Continuous Drain Current (Id) 10A
  • Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds) 5pF@50V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 370mΩ@10V,5A
  • Package TO-220
  • Manufacturer STMicroelectronics
  • Series MDmesh™ II
  • Packaging Tube
  • Part Status Obsolete
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600V
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
  • Vgs (Max) ±25V
  • Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
  • FET Feature -
  • Power Dissipation (Max) 90W (Tc)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220AB
  • Package / Case TO-220-3
  • Base Part Number STP11N
  • detail N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220AB

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