CSD19535KTTT

CSD19535KTTT

CSD19535KTTT

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Manufacturer Texas Instruments
Package TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Datasheet CSD19535KTT
Description N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Texas Instruments CSD19535KTTT
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 300W
  • Total Gate Charge (Qg@Vgs) 98nC@10V
  • Drain Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss@Vds) 7930pF@50V
  • Continuous Drain Current (Id) 200A
  • Gate Threshold Voltage (Vgs(th)@Id) 3.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 3.4mΩ@100A,10V
  • Package D2PAK
  • Manufacturer Texas Instruments
  • Part Status Active
  • Power Dissipation (Max) 300W (Tc)
  • Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
  • Drain to Source Voltage (Vdss) 100V
  • Base Part Number CSD19535
  • Technology MOSFET (Metal Oxide)
  • Series NexFET™
  • Mounting Type Surface Mount
  • Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
  • Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 7930pF @ 50V
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Current - Continuous Drain (Id) @ 25°C 200A (Ta)
  • Vgs (Max) ±20V
  • Packaging Cut Tape (CT)
  • Supplier Device Package DDPAK/TO-263-3
  • FET Type N-Channel
  • Vgs(th) (Max) @ Id 3.4V @ 250µA
  • FET Feature -
  • detail N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3

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