ULN2002A
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| Manufacturer | STMicroelectronics |
| Package | 16-DIP (0.300", 7.62mm) |
| Datasheet | ULN200x(A,D1) |
| Description | Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP |
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مشخصات ULN2002A
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistor Arrays
- Datasheet STMicroelectronics ULN2002A
- Input current (Ii@Vi) 0.82mA@17V
- Operating Temperature -40°C~+85°C
- Input Capacitance (Ci) 15pF
- Output leakage current (Icex@Vce) 50uA@50V
- Clamp Diode Forward Voltage (VF@IF) 1.7V@350mA
- Clamp Diode Leakage Current (IR@VR) 50uA@50V
- ON-state input voltage(VI(on)@Vce,Ic) 13V@2V,300mA
- Off-state input current (Ii(off)@Vce,Ic) 65uA@500uA
- Collector-emitter saturation voltage (VCE(sat)@Ii,Ic) 1.3V@500uA,350mA
- Package DIP-16
- Manufacturer STMicroelectronics
- Series -
- Packaging Tube
- Part Status Active
- Transistor Type 7 NPN Darlington
- Current - Collector (Ic) (Max) 500mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max) 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V
- Power - Max -
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case 16-DIP (0.300", 7.62mm)
- Supplier Device Package 16-DIP
- Base Part Number ULN2002
- detail Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP
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