STD13N60M2
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| Manufacturer | STMicroelectronics |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | ST(B,D)13N60M2 |
| Description | N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK |
فروشنده های STD13N60M2
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مشخصات STD13N60M2
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STD13N60M2
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 110W
- Total Gate Charge (Qg@Vgs) 17nC@10V
- Drain Source Voltage (Vdss) 600V
- Input Capacitance (Ciss@Vds) 580pF@100V
- Continuous Drain Current (Id) 11A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 380mΩ@10V,5.5A
- Package TO-252
- Manufacturer STMicroelectronics
- Series MDmesh™ II Plus
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 580pF @ 100V
- FET Feature -
- Power Dissipation (Max) 110W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number STD13
- detail N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK
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