STFW3N170
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| Manufacturer | STMicroelectronics |
| Package | ISOWATT218FX |
| Datasheet | STFW3N170 |
| Description | N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole ISOWATT-218FX |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STFW3N170
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 63W
- Total Gate Charge (Qg@Vgs) 44nC@10V
- Drain Source Voltage (Vdss) 1.7kV
- Input Capacitance (Ciss@Vds) 1100pF@100V
- Continuous Drain Current (Id) 2.6A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 13Ω@10V,1.3A
- Package TO-3PF
- Manufacturer STMicroelectronics
- Series PowerMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1700V
- Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 13Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
- FET Feature -
- Power Dissipation (Max) 63W (Tc)
- Mounting Type Through Hole
- Supplier Device Package ISOWATT-218FX
- Package / Case ISOWATT218FX
- Base Part Number STFW
- detail N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole ISOWATT-218FX
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