STD6N62K3
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| Manufacturer | STMicroelectronics |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | ST(B,D)6N62K3 |
| Description | N-Channel 620V 5.5A (Tc) 90W (Tc) Surface Mount DPAK |
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مشخصات STD6N62K3
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STD6N62K3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 90W
- Total Gate Charge (Qg@Vgs) 25.7nC@10V
- Drain Source Voltage (Vdss) 620V
- Input Capacitance (Ciss@Vds) 706pF@50V
- Continuous Drain Current (Id) 5.5A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@50uA
- Reverse Transfer Capacitance (Crss@Vds) 17pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 950mΩ@10V,2.8A
- Package TO-252
- Manufacturer STMicroelectronics
- Series SuperMESH3™
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 620V
- Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.28Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 25.7nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 706pF @ 50V
- FET Feature -
- Power Dissipation (Max) 90W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number STD6N
- detail N-Channel 620V 5.5A (Tc) 90W (Tc) Surface Mount DPAK
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