STW27N60M2-EP
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | ST(P,W)27N60M2-EP Datasheet |
| Description | N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3 |
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مشخصات
- Manufacturer STMicroelectronics
- Series MDmesh™ M2-EP
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 163mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 100V
- FET Feature -
- Power Dissipation (Max) 170W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Package / Case TO-247-3
- Base Part Number STW27N
- detail N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3
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