STGWT60H65DFB
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| Manufacturer | STMicroelectronics |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | STGW(T)60H65DFB |
| Description | IGBT Trench Field Stop 650V 80A 375W Through Hole TO-3P |
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تغییرات قیمت
مشخصات
- RoHS true
- Type Trench Field Stop
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet STMicroelectronics STGWT60H65DFB
- Operating Temperature -55°C~+175°C@(Tj)
- Collector Current (Ic) 80A
- Power Dissipation (Pd) 375W
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) 1.09mJ
- Pulsed Collector Current (Icm) 240A
- Turn?off Switching Loss (Eoff) 0.626mJ
- Diode Reverse Recovery Time (Trr) 60ns
- Collector-Emitter Breakdown Voltage (Vces) 650V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
- Package TO-3P-3
- Manufacturer STMicroelectronics
- Series -
- Packaging Tube
- Part Status Active
- IGBT Type Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) 650V
- Current - Collector (Ic) (Max) 80A
- Current - Collector Pulsed (Icm) 240A
- Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
- Power - Max 375W
- Switching Energy 1.09mJ (on), 626µJ (off)
- Input Type Standard
- Gate Charge 306nC
- Td (on/off) @ 25°C 51ns/160ns
- Test Condition 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr) 60ns
- Mounting Type Through Hole
- Package / Case TO-3P-3, SC-65-3
- Supplier Device Package TO-3P
- Base Part Number STGWT60
- detail IGBT Trench Field Stop 650V 80A 375W Through Hole TO-3P
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