STW56N65M2
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | STW56N65M2 |
| Description | N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247 |
sellers STW56N65M2
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تغییرات قیمت
مشخصات
- Manufacturer STMicroelectronics
- Series MDmesh™ M2
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 62mOhm @ 24.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 100V
- FET Feature -
- Power Dissipation (Max) 358W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- Base Part Number STW56N
- detail N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247
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