STD4NK80Z-1
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| Manufacturer | STMicroelectronics |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | ST(D,P)4NK80Z(-1,FP) |
| Description | N-Channel 800V 3A (Tc) 80W (Tc) Through Hole I-PAK |
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مشخصات STD4NK80Z-1
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
- FET Feature -
- Power Dissipation (Max) 80W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number STD4N
- detail N-Channel 800V 3A (Tc) 80W (Tc) Through Hole I-PAK
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