STP23NM50N
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STx23NM50N |
| Description | N-Channel 500V 17A (Tc) 125W (Tc) Through Hole TO-220-3 |
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مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP23NM50N
- Operating Temperature +150°C@(Tj)
- Power Dissipation (Pd) 125W
- Total Gate Charge (Qg@Vgs) 45nC@10V
- Drain Source Voltage (Vdss) 500V
- Input Capacitance (Ciss@Vds) 1330pF@50V
- Continuous Drain Current (Id) 17A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 4.8pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 162mΩ@10V,8.5A
- Package TO-220
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500V
- Current - Continuous Drain (Id) @ 25°C 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 50V
- FET Feature -
- Power Dissipation (Max) 125W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number STP23N
- detail N-Channel 500V 17A (Tc) 125W (Tc) Through Hole TO-220-3
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