BD135-16
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| Manufacturer | STMicroelectronics |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD135-136,139-140 |
| Description | Bipolar (BJT) Transistor NPN 45V 1.5A 1.25W Through Hole SOT-32 |
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مشخصات BD135-16
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet STMicroelectronics BD135-16
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1.5A
- Power Dissipation (Pd) 1.25W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 40@150mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@500mA,50mA
- Package TO-126
- Manufacturer STMicroelectronics
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 1.5A
- Voltage - Collector Emitter Breakdown (Max) 45V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
- Power - Max 1.25W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package SOT-32
- Base Part Number BD135
- detail Bipolar (BJT) Transistor NPN 45V 1.5A 1.25W Through Hole SOT-32
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