STY60NM60
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | STY60NM60 |
| Description | N-Channel 600V 60A (Tc) 560W (Tc) Through Hole MAX247™ |
sellers STY60NM60
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تغییرات قیمت
مشخصات
- Manufacturer STMicroelectronics
- Series MDmesh™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 266nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
- FET Feature -
- Power Dissipation (Max) 560W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package MAX247™
- Package / Case TO-247-3
- Base Part Number STY60N
- detail N-Channel 600V 60A (Tc) 560W (Tc) Through Hole MAX247™
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