CSD19538Q2T
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| Manufacturer | Texas Instruments |
| Package | 6-WDFN Exposed Pad |
| Datasheet | CSD19538Q2 Datasheet |
| Description | N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD19538Q2T
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;20.2W
- Total Gate Charge (Qg@Vgs) 5.6nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 454pF@50V
- Continuous Drain Current (Id) 13.1A
- Gate Threshold Voltage (Vgs(th)@Id) 3.8V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 59mΩ@5A,10V
- Package WSON-6(2x2)
- Manufacturer Texas Instruments
- Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
- Drain to Source Voltage (Vdss) 100V
- Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
- Vgs (Max) ±20V
- FET Type N-Channel
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
- FET Feature -
- Input Capacitance (Ciss) (Max) @ Vds 454pF @ 50V
- Packaging Cut Tape (CT)
- Package / Case 6-WDFN Exposed Pad
- Part Status Active
- Series NexFET™
- Vgs(th) (Max) @ Id 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V
- Supplier Device Package 6-WSON (2x2)
- Mounting Type Surface Mount
- Base Part Number CSD19538
- detail N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
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