STFI31N65M5
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| Manufacturer | STMicroelectronics |
| Package | TO-262-3 Full Pack, I²Pak |
| Datasheet | STx31N65M5 |
| Description | N-Channel 650V 22A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281) |
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مشخصات STFI31N65M5
- Manufacturer STMicroelectronics
- Series MDmesh™ V
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 148mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1865pF @ 100V
- FET Feature -
- Power Dissipation (Max) 30W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAKFP (TO-281)
- Package / Case TO-262-3 Full Pack, I²Pak
- Base Part Number STFI31N
- detail N-Channel 650V 22A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
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