STFI6N62K3
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| Manufacturer | STMicroelectronics |
| Package | TO-262-3 Full Pack, I²Pak |
| Datasheet | STx(I)6N62K3 |
| Description | N-Channel 620V 5.5A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281) |
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تغییرات قیمت
مشخصات
- Manufacturer STMicroelectronics
- Series SuperMESH3™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 620V
- Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 875pF @ 50V
- FET Feature -
- Power Dissipation (Max) 30W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAKFP (TO-281)
- Package / Case TO-262-3 Full Pack, I²Pak
- Base Part Number STFI6N
- detail N-Channel 620V 5.5A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
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