STP4N52K3
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STx4N52K3 |
| Description | N-Channel 525V 2.5A (Tc) 45W (Tc) Through Hole TO-220 |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP4N52K3
- Power Dissipation (Pd) 45W
- Total Gate Charge (Qg@Vgs) 11nC@10V
- Drain Source Voltage (Vdss) 525V
- Input Capacitance (Ciss@Vds) 334pF@100V
- Continuous Drain Current (Id) 2.5A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@50uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.6Ω@10V,1.25A
- Package TO-220
- Manufacturer STMicroelectronics
- Series SuperMESH3™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 525V
- Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 334pF @ 100V
- FET Feature -
- Power Dissipation (Max) 45W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Package / Case TO-220-3
- Base Part Number STP4N
- detail N-Channel 525V 2.5A (Tc) 45W (Tc) Through Hole TO-220
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