STB34NM60ND
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | STx34NM60ND |
| Description | N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D2PAK |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Power Dissipation (Pd) 190W
- Total Gate Charge (Qg@Vgs) 80.4nC@10V
- Input Capacitance (Ciss@Vds) 2785pF@50V
- Continuous Drain Current (Id) 29A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 110mΩ@14.5A,10V
- Package TO-263-3(D2PAK)
- Manufacturer STMicroelectronics
- Series FDmesh™ II
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 80.4nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 2785pF @ 50V
- FET Feature -
- Power Dissipation (Max) 190W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STB34N
- detail N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D2PAK
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