STGB19NC60KDT4
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | STGx19NC60KD |
| Description | IGBT 600V 35A 125W Surface Mount D2PAK |
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مشخصات STGB19NC60KDT4
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet STMicroelectronics STGB19NC60KDT4
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 35A
- Power Dissipation (Pd) 125W
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) 0.165mJ
- Pulsed Collector Current (Icm) 75A
- Turn?off Switching Loss (Eoff) 0.255mJ
- Diode Reverse Recovery Time (Trr) 31ns
- Collector-Emitter Breakdown Voltage (Vces) 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
- Package D2PAK
- Manufacturer STMicroelectronics
- Series PowerMESH™
- Packaging Cut Tape (CT)
- Part Status Active
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 600V
- Current - Collector (Ic) (Max) 35A
- Current - Collector Pulsed (Icm) 75A
- Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
- Power - Max 125W
- Switching Energy 165µJ (on), 255µJ (off)
- Input Type Standard
- Gate Charge 55nC
- Td (on/off) @ 25°C 30ns/105ns
- Test Condition 480V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr) 31ns
- Mounting Type Surface Mount
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package D2PAK
- Base Part Number STGB19
- detail IGBT 600V 35A 125W Surface Mount D2PAK
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