STP10P6F6
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STx10P6F6 |
| Description | P-Channel 60V 10A (Tc) 30W (Tc) Through Hole TO-220 |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP10P6F6
- Operating Temperature +175°C@(Tj)
- Power Dissipation (Pd) 30W
- Total Gate Charge (Qg@Vgs) 6.4nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 340pF@48V
- Continuous Drain Current (Id) 10A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 20pF@48V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 130mΩ@10V,5A
- Package TO-220
- Manufacturer STMicroelectronics
- Series DeepGATE™, STripFET™ VI
- Packaging Tube
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V
- FET Feature -
- Power Dissipation (Max) 30W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Package / Case TO-220-3
- Base Part Number STP10
- detail P-Channel 60V 10A (Tc) 30W (Tc) Through Hole TO-220
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