STQ1HNK60R-AP

600V 400mA 7.3Ω@10V,500mA 3W N Channel TO-92 MOSFETs ROHS

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مشخصات فنی:
Manufacturer STMicroelectronics
Package TO-226-3, TO-92-3 (TO-226AA)
Datasheet STx1(H)NK60(-1,R)
Description N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet STMicroelectronics STQ1HNK60R-AP
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 3W
  • Total Gate Charge (Qg@Vgs) 10nC@10V
  • Drain Source Voltage (Vdss) 600V
  • Input Capacitance (Ciss@Vds) 156pF@25V
  • Continuous Drain Current (Id) 400mA
  • Gate Threshold Voltage (Vgs(th)@Id) 3.7V@250uA
  • Reverse Transfer Capacitance (Crss@Vds) 3.8pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 7.3Ω@10V,500mA
  • Package TO-92
  • Manufacturer STMicroelectronics
  • Series SuperMESH™
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600V
  • Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 3W (Tc)
  • Mounting Type Through Hole
  • Supplier Device Package TO-92-3
  • Package / Case TO-226-3, TO-92-3 (TO-226AA)
  • Base Part Number STQ1
  • detail N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

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