STF4N80K5
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 Full Pack |
| Datasheet | STx4N80K5 |
| Description | N-Channel 800V 3A (Tc) 20W (Tc) Through Hole TO-220FP |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STF4N80K5
- Power Dissipation (Pd) 20W
- Drain Source Voltage (Vdss) 800V
- Continuous Drain Current (Id) 3A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.5Ω@10V,1.5A
- Package TO-220
- Manufacturer STMicroelectronics
- Series SuperMESH5™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
- FET Feature -
- Power Dissipation (Max) 20W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP
- Package / Case TO-220-3 Full Pack
- Base Part Number STF4N
- detail N-Channel 800V 3A (Tc) 20W (Tc) Through Hole TO-220FP
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