STF6N65K3
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 Full Pack |
| Datasheet | STx(x)6N65K3 |
| Description | N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole TO-220FP |
فروشنده های STF6N65K3
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تغییرات قیمت
مشخصات STF6N65K3
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STF6N65K3
- Power Dissipation (Pd) 30W
- Drain Source Voltage (Vdss) 650V
- Continuous Drain Current (Id) 5.4A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@50uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.3Ω@10V,2.8A
- Package TO-220
- Manufacturer STMicroelectronics
- Series SuperMESH3™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 880pF @ 50V
- FET Feature -
- Power Dissipation (Max) 30W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP
- Package / Case TO-220-3 Full Pack
- Base Part Number STF6N
- detail N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole TO-220FP
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